FCD5N60TM
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Описание
Описание Транзистор: N-MOSFET, полевой, 600В, 2,9А, 54Вт, DPAK Характеристики
Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Channel Mode | Enhancement |
Continuous Drain Current | 4.6(A) |
Drain-Source On-Volt | 600(V) |
Gate-Source Voltage (Max) | ±30(V) |
Mounting | Surface Mount |
Number of Elements | 1 |
Operating Temp Range | -55C to 150C |
Operating Temperature Classification | Military |
Package Type | DPAK |
Packaging | Tape and Reel |
Pin Count | 2+Tab |
Polarity | N |
Power Dissipation | 54(W) |
Rad Hardened | No |
Type | Power MOSFET |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 22 ns |
Forward Transconductance - Min: | 3.8 S |
Id - Continuous Drain Current: | 4.6 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | DPAK-3(TO-252-3) |
Pd - Power Dissipation: | 54 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 16 nC |
Rds On - Drain-Source Resistance: | 810 mOhms |
REACH - SVHC: | Details |
Rise Time: | 40 ns |
Series: | FCD5N60 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | SuperFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 47 ns |
Typical Turn-On Delay Time: | 12 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Техническая документация
Datasheet
pdf, 429 КБ
Документация
pdf, 432 КБ