2N7000-D75Z

Фото 1/2 2N7000-D75Z
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см. техническую документацию
120 руб.
Мин. кол-во для заказа 2 шт.
от 10 шт.90 руб.
от 100 шт.50 руб.
от 500 шт.42.94 руб.
2 шт. на сумму 240 руб.
Плати частями
от 0 руб. × 4 платежа
Номенклатурный номер: 8008470417

Описание

Cloud Power Management Solutions

onsemi Cloud Power Management Solutions drive efficiency while simplifying system design, reducing board space, improving reliability and accelerating time to market. As the world demand for energy increases by 35 to 40% by 2030, onsemi powers major industrial products with cool efficiency to conserve the energy we use every day.

Технические параметры

Brand: onsemi/Fairchild
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 2000
Forward Transconductance - Min: 0.1 S
Id - Continuous Drain Current: 200 mA
Manufacturer: onsemi
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package / Case: TO-92-3
Packaging: Ammo Pack
Part # Aliases: 2N7000_D75Z
Pd - Power Dissipation: 400 mW
Product Category: MOSFET
Product Type: MOSFET
Product: MOSFET Small Signals
Rds On - Drain-Source Resistance: 1.2 Ohms
Series: 2N7000
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
Case TO92
Drain current 0.2A
Drain-source voltage 60V
Gate-source voltage ±20V
Kind of channel enhanced
Kind of package reel, tape
Manufacturer ONSEMI
Mounting THT
On-state resistance
Polarisation unipolar
Power dissipation 0.4W
Pulsed drain current 0.5A
Technology DMOS
Type of transistor N-MOSFET

Техническая документация

Datasheet
pdf, 285 КБ