FODM8801CV
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Описание
FODM8801 OptoHiT™ Phototransistors
onsemi FODM8801 OptoHiT™ Phototransistors are first-of-their-kind phototransistors, utilizing a leading-edge, proprietary process technology to achieve high operating temperature characteristics up to +125°C. The optocoupler consists of an aluminum gallium arsenide (AlGaAs) infrared light emitting diode (LED) optically coupled to a phototransistor, in a compact half pitch, mini-flat, 4-pin package. It delivers high current transfer ratio at very low input current. The input-output isolation voltage, V ISO, is rated at 3750 VAC RMS. onsemi FODM8801 devices are ideally suited for use in DC-DC converters.
onsemi FODM8801 OptoHiT™ Phototransistors are first-of-their-kind phototransistors, utilizing a leading-edge, proprietary process technology to achieve high operating temperature characteristics up to +125°C. The optocoupler consists of an aluminum gallium arsenide (AlGaAs) infrared light emitting diode (LED) optically coupled to a phototransistor, in a compact half pitch, mini-flat, 4-pin package. It delivers high current transfer ratio at very low input current. The input-output isolation voltage, V ISO, is rated at 3750 VAC RMS. onsemi FODM8801 devices are ideally suited for use in DC-DC converters.
Технические параметры
Automotive | No |
Current Transfer Ratio Test Current (mA) | 1 |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Input Type | DC |
Lead Shape | Gull-wing |
Maximum Collector Current (mA) | 30 |
Maximum Collector-Emitter Saturation Voltage (mV) | 400 |
Maximum Collector-Emitter Voltage (V) | 75 |
Maximum Current Transfer Ratio (%) | 400 |
Maximum Forward Current (mA) | 20 |
Maximum Forward Voltage (V) | 1.8 |
Maximum Operating Temperature (°C) | 125 |
Maximum Power Dissipation (mW) | 150 |
Maximum Reverse Voltage (V) | 6 |
Minimum Current Transfer Ratio (%) | 200 |
Minimum Forward Voltage (V) | 1 |
Minimum Isolation Voltage (Vrms) | 3750 |
Minimum Operating Temperature (°C) | -40 |
Mounting | Surface Mount |
Number of Channels per Chip | 1 |
Output Device | Transistor |
Output Type | DC |
Packaging | Tube |
Part Status | Active |
PCB changed | 4 |
Pin Count | 4 |
PPAP | No |
Standard | DIN|EN|IEC|UL|VDE |
Standard Package Name | SOP |
Supplier Package | Mini-Flat |
Typical Fall Time (us) | 5.5 |
Typical Forward Voltage (V) | 1.35 |
Typical Rise Time (us) | 5 |
Brand: | onsemi/Fairchild |
Collector-Emitter Breakdown Voltage: | 75 V |
Configuration: | 1 Channel |
Current Transfer Ratio - Max: | 400% |
Current Transfer Ratio - Min: | 200% |
Current Transfer Ratio: | 200%to 400% |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 5.5 us |
If - Forward Current: | 1 mA |
Isolation Voltage: | 3750 Vrms |
Manufacturer: | onsemi |
Maximum Collector Current: | 30 mA |
Maximum Collector Emitter Saturation Voltage: | 400 mV |
Maximum Collector Emitter Voltage: | 75 V |
Maximum Operating Temperature: | +125 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Output Type: | NPN Phototransistor |
Package / Case: | Miniflat-4 |
Packaging: | Tube |
Pd - Power Dissipation: | 150 mW |
Product Category: | Transistor Output Optocouplers |
Product Type: | Transistor Output Optocouplers |
Rise Time: | 5 us |
Series: | FODM8801C |
Subcategory: | Optocouplers |
Vf - Forward Voltage: | 1.8 V |
Vr - Reverse Voltage: | 6 V |
Техническая документация
Datasheet
pdf, 196 КБ