DMT6015LFV-7
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см. техническую документацию
см. техническую документацию
93 руб.
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Описание
Trans MOSFET N-CH 60V 9.5A 8-Pin PowerDI EP T/R
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 9.5 |
| Maximum Drain Source Resistance (mOhm) | 16@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Gate Source Voltage (V) | ±16 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2200 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Product Category | Power MOSFET |
| Supplier Package | PowerDI EP |
| Typical Fall Time (ns) | 8.6 |
| Typical Gate Charge @ 10V (nC) | 18.9 |
| Typical Gate Charge @ Vgs (nC) | 18.9@10V|8.9@4.5V |
| Typical Input Capacitance @ Vds (pF) | 1103@30V |
| Typical Rise Time (ns) | 7.1 |
| Typical Turn-Off Delay Time (ns) | 19.5 |
| Typical Turn-On Delay Time (ns) | 4.1 |
| Continuous Drain Current (Id) | 9.5A;35A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 16mΩ@10A, 10V |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Input Capacitance (Ciss@Vds) | 1.103nF@30V |
| Power Dissipation (Pd) | 2.2W;30W |
| Total Gate Charge (Qg@Vgs) | 18.9nC@10V |
| Type | 1PCSNChannel |
Техническая документация
Datasheet
pdf, 530 КБ
