2DB1188Q-13
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см. техническую документацию
см. техническую документацию
24 руб.
Мин. кол-во для заказа 20 шт.
Кратность заказа 5 шт.
от 50 шт. —
19 руб.
от 150 шт. —
17 руб.
от 500 шт. —
14.10 руб.
20 шт.
на сумму 480 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Automotive Bipolar Junction Transistors (BJT)
Diodes Incorporated Automotive Bipolar Junction Transistors (BJT) are highly-reliable, AEC-Q101 qualified transistors that meet the demands of the automotive industry. These BJTs come with the leading-edge silicon technology that gives the best-in-class saturation voltage performance with respect to the footprint. The automotive BJTs provide high minimum gains that help to reduce the base current requirements and assist in faster switching. These BJTs are the Production Part Approval Process (PPAP) supported.
Diodes Incorporated Automotive Bipolar Junction Transistors (BJT) are highly-reliable, AEC-Q101 qualified transistors that meet the demands of the automotive industry. These BJTs come with the leading-edge silicon technology that gives the best-in-class saturation voltage performance with respect to the footprint. The automotive BJTs provide high minimum gains that help to reduce the base current requirements and assist in faster switching. These BJTs are the Production Part Approval Process (PPAP) supported.
Технические параметры
| Collector-Emitter Breakdown Voltage | 32V |
| Maximum DC Collector Current | 2A |
| Pd - Power Dissipation | 1W |
| Transistor Type | PNP |
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 40 V |
| Collector- Emitter Voltage VCEO Max: | 32 V |
| Collector-Emitter Saturation Voltage: | 800 mV |
| Configuration: | Single |
| DC Collector/Base Gain hfe Min: | 120 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Gain Bandwidth Product fT: | 120 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-89-3 |
| Pd - Power Dissipation: | 1 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Qualification: | AEC-Q101 |
| Series: | 2DB11 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
Техническая документация
Datasheet
pdf, 534 КБ
Datasheet 2DB1188Q-13
pdf, 282 КБ
