DMN3032LFDBQ-7
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Описание
Automotive MOSFETs
Diodes Incorporated Automotive MOSFETs meet the stringent requirements of the AEC-Q101 reliability standard of the Automotive Electronics Council. Products with a 'Q' suffix indicate the product is Automotive grade. This means the Diodes Incorporated device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive applications. The MOSFETs support customers with the Production Part Approval Process (PPAP) and TS16949-approved manufacturing sites.
Diodes Incorporated Automotive MOSFETs meet the stringent requirements of the AEC-Q101 reliability standard of the Automotive Electronics Council. Products with a 'Q' suffix indicate the product is Automotive grade. This means the Diodes Incorporated device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive applications. The MOSFETs support customers with the Production Part Approval Process (PPAP) and TS16949-approved manufacturing sites.
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 6.2 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | DFN-2020-6 |
| Pd - Power Dissipation: | 1.7 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 10.6 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 30 mOhms |
| Series: | DMN3032 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Continuous Drain Current (Id) | 6.2A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 30mΩ@5.8A, 10V |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
| Input Capacitance (Ciss@Vds) | 500pF@15V |
| Power Dissipation (Pd) | 1W |
| Total Gate Charge (Qg@Vgs) | 10.6nC@10V |
Техническая документация
Datasheet
pdf, 574 КБ
