FDMC86102L
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260 руб.
Мин. кол-во для заказа 2 шт.
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176 руб.
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144.52 руб.
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Описание
Полевые МОП-транзисторы Fairchild PowerTrench
Технические параметры
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Forward Transconductance - Min: | 26 S |
| Id - Continuous Drain Current: | 18 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | Power-33-8 |
| Pd - Power Dissipation: | 41 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 22 nC |
| Rds On - Drain-Source Resistance: | 23 mOhms |
| Series: | FDMC86102L |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Resistance | 39 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 41 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | Power 33 |
| Pin Count | 8 |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V |
| Width | 3.3mm |
