FDD86367
![FDD86367](https://static.chipdip.ru/lib/532/DOC016532279.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
440 руб.
от 10 шт. —
370 руб.
от 30 шт. —
317 руб.
от 100 шт. —
270.11 руб.
Добавить в корзину 1 шт.
на сумму 440 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
N-Channel PowerTrench MOSFET 80V 100A 4.2mOhm 3-Pin DPAK T/R - Tape and Reel (Alt: FDD86367)
Технические параметры
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 16 ns |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | DPAK-3 |
Pd - Power Dissipation: | 227 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 88 nC |
Qualification: | AEC-Q101 |
Rds On - Drain-Source Resistance: | 3.3 mOhms |
Rise Time: | 49 ns |
Series: | FDD86367 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 36 ns |
Typical Turn-On Delay Time: | 20 ns |
Vds - Drain-Source Breakdown Voltage: | 80 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Current - Continuous Drain (Id) @ 25В°C | 100A(Tc) |
Drain to Source Voltage (Vdss) | 80V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 88nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4840pF @ 40V |
Manufacturer | ON Semiconductor |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 175В°C(TJ) |
Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
Packaging | Cut Tape(CT) |
Part Status | Active |
Power Dissipation (Max) | 227W(Tj) |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 80A, 10V |
Series | Automotive, AEC-Q101, PowerTrenchВ® |
Supplier Device Package | D-PAK(TO-252) |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 4V @ 250ВµA |
Техническая документация
Datasheet
pdf, 403 КБ