FQU10N20CTU
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
310 руб.
Мин. кол-во для заказа 2 шт.
от 10 шт. —
260 руб.
Добавить в корзину 2 шт.
на сумму 620 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Trans MOSFET N-CH 200V 7.8A 3-Pin(3+Tab) IPAK Tube
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 7.8 |
| Maximum Drain Source Resistance (mOhm) | 360@10V |
| Maximum Drain Source Voltage (V) | 200 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 50000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Packaging | Tube |
| Part Status | Obsolete |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-251 |
| Supplier Package | IPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 72 |
| Typical Gate Charge @ 10V (nC) | 20 |
| Typical Gate Charge @ Vgs (nC) | 20@10V |
| Typical Input Capacitance @ Vds (pF) | 395@25V |
| Typical Rise Time (ns) | 92 |
| Typical Turn-Off Delay Time (ns) | 70 |
| Typical Turn-On Delay Time (ns) | 11 |
| Вес, г | 0.3431 |
Техническая документация
Datasheet
pdf, 659 КБ
