FDH055N15A
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Описание
Описание Транзистор: N-MOSFET; 150В; 118А; 429Вт; TO247 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Channel Type | N Channel |
| Drain Source On State Resistance | 0.0048Ом |
| Power Dissipation | 429Вт |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | PowerTrench |
| Максимальная Рабочая Температура | 175 C |
| Монтаж транзистора | Through Hole |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 150В |
| Непрерывный Ток Стока | 156А |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 4В |
| Рассеиваемая Мощность | 429Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.0048Ом |
| Стиль Корпуса Транзистора | TO-247 |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Channel Mode | Enhancement |
| Maximum Continuous Drain Current | 167 A |
| Maximum Drain Source Resistance | 5.9 mΩ |
| Maximum Drain Source Voltage | 150 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 429 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-247 |
| Pin Count | 3 |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 92 nC @ 10 V |
| Width | 15.87mm |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Fall Time: | 21 ns |
| Forward Transconductance - Min: | 219 S |
| Id - Continuous Drain Current: | 167 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 429 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 92 nC |
| Rds On - Drain-Source Resistance: | 4.8 mOhms |
| Rise Time: | 67 ns |
| Series: | FDH055N15A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Brand | ON Semiconductor/Fairchild |
| Configuration | Single |
| Factory Pack Quantity | 30 |
| Fall Time | 21 ns |
| Forward Transconductance - Min | 219 S |
| Height | 20.82 mm |
| Id - Continuous Drain Current | 167 A |
| Length | 15.87 mm |
| Manufacturer | ON Semiconductor |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 429 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 92 nC |
| Rds On - Drain-Source Resistance | 4.8 mOhms |
| Rise Time | 67 ns |
| RoHS | Details |
| Technology | Si |
| Tradename | PowerTrench |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Unit Weight | 0.225401 oz |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
Техническая документация
Datasheet
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Datasheet
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Datasheet FDH055N15A
pdf, 582 КБ
Datasheet FDH055N15A
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Документация
pdf, 435 КБ
