DMP1005UFDF-7

Фото 1/2 DMP1005UFDF-7
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см. техническую документацию
33 руб.
Мин. кол-во для заказа 15 шт.
Кратность заказа 5 шт.
от 50 шт.28 руб.
от 150 шт.26 руб.
от 500 шт.22.44 руб.
15 шт. на сумму 495 руб.
Плати частями
от 0 руб. × 4 платежа
Номенклатурный номер: 8022781598
Бренд: DIODES INC.

Описание

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Технические параметры

Channel Mode Enhancement
Channel Type P
Forward Diode Voltage 1.2V
Maximum Continuous Drain Current 12.8 A
Maximum Drain Source Resistance 18.5 mΩ
Maximum Drain Source Voltage 12 V
Maximum Gate Source Voltage ±8 V
Maximum Gate Threshold Voltage 1V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 2.1 W
Minimum Gate Threshold Voltage 0.3V
Minimum Operating Temperature -55 °C
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type U-DFN2020
Pin Count 6
Transistor Configuration Single
Typical Gate Charge @ Vgs 47 nC @ 8V
Width 2.05mm
Brand: Diodes Incorporated
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 3000
Fall Time: 125 ns
Id - Continuous Drain Current: 26 A
Manufacturer: Diodes Incorporated
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: U-DFN2020-6
Pd - Power Dissipation: 2.1 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 47 nC
Rds On - Drain-Source Resistance: 5.8 mOhms
Rise Time: 21 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: P-Channel
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 140 ns
Typical Turn-On Delay Time: 6.1 ns
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs - Gate-Source Voltage: -8 V, +8 V
Vgs th - Gate-Source Threshold Voltage: 1 V

Техническая документация

Datasheet
pdf, 488 КБ
Datasheet
pdf, 385 КБ