DMT8008LFG-7
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см. техническую документацию
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200 руб.
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Описание
Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Fall Time: | 21 ns |
| Id - Continuous Drain Current: | 48 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerDI3333-8 |
| Pd - Power Dissipation: | 1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 37.7 nC |
| Rds On - Drain-Source Resistance: | 6.9 mOhms |
| Rise Time: | 12 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 37 ns |
| Typical Turn-On Delay Time: | 6.9 ns |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Continuous Drain Current (Id) | 16A;48A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 6.9mΩ@20A, 10V |
| Drain Source Voltage (Vdss) | 80V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@1mA |
| Input Capacitance (Ciss@Vds) | 2.254nF@40V |
| Power Dissipation (Pd) | 1W;23.5W |
| Total Gate Charge (Qg@Vgs) | 37.7nC@10V |
| Type | 1PCSNChannel |
Техническая документация
Datasheet
pdf, 343 КБ
