FDC640P, MOSFET P-CH 20V 4.5A SUPERSOT6
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см. техническую документацию
см. техническую документацию
52 руб.
Кратность заказа 10 шт.
от 100 шт. —
42 руб.
от 500 шт. —
31 руб.
от 3000 шт. —
27.97 руб.
10 шт.
на сумму 520 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Cloud Power Management Solutions
onsemi Cloud Power Management Solutions drive efficiency while simplifying system design, reducing board space, improving reliability and accelerating time to market. As the world demand for energy increases by 35 to 40% by 2030, onsemi powers major industrial products with cool efficiency to conserve the energy we use every day.
onsemi Cloud Power Management Solutions drive efficiency while simplifying system design, reducing board space, improving reliability and accelerating time to market. As the world demand for energy increases by 35 to 40% by 2030, onsemi powers major industrial products with cool efficiency to conserve the energy we use every day.
Технические параметры
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 9 ns |
| Forward Transconductance - Min: | 16 S |
| Id - Continuous Drain Current: | 4.5 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SSOT-6 |
| Part # Aliases: | FDC640P_NL |
| Pd - Power Dissipation: | 1.6 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Qg - Gate Charge: | 13 nC |
| Rds On - Drain-Source Resistance: | 53 mOhms |
| Rise Time: | 9 ns |
| Series: | FDC640P |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 24 ns |
| Typical Turn-On Delay Time: | 12 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Вес, г | 9 |
Техническая документация
Datasheet
pdf, 228 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
