DMN10H700S-13

DMN10H700S-13
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см. техническую документацию
19 руб.
Мин. кол-во для заказа 25 шт.
Кратность заказа 5 шт.
от 50 шт.16 руб.
от 150 шт.14 руб.
25 шт. на сумму 475 руб.
Плати частями
от 0 руб. × 4 платежа
Номенклатурный номер: 8022844209
Бренд: DIODES INC.

Описание

Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

Технические параметры

Brand: Diodes Incorporated
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 10000
Id - Continuous Drain Current: 700 mA
Manufacturer: Diodes Incorporated
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: SOT-23-3
Pd - Power Dissipation: 500 mW
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 4.6 nC
Rds On - Drain-Source Resistance: 700 mOhms
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2 V

Техническая документация

Datasheet DMN10H700S-7
pdf, 596 КБ