C3M0040120K
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528 шт., срок 6-8 недель
3 160 руб.
от 10 шт. —
2 920 руб.
от 30 шт. —
2 610 руб.
от 90 шт. —
2 327.82 руб.
1 шт.
на сумму 3 160 руб.
Плати частями
от 790 руб. × 4 платежа
от 790 руб. × 4 платежа
Альтернативные предложения3
Номенклатурный номер: 8022856600
Бренд: WOLFSPEED
Описание
The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs is a range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency.
Технические параметры
Brand: | Wolfspeed |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Fall Time: | 9 ns |
Forward Transconductance - Min: | 21 S |
Id - Continuous Drain Current: | 66 A |
Manufacturer: | Wolfspeed |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-247-4 |
Packaging: | Tube |
Pd - Power Dissipation: | 326 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET |
Qg - Gate Charge: | 99 nC |
Rds On - Drain-Source Resistance: | 40 mOhms |
Rise Time: | 17 ns |
Subcategory: | MOSFETs |
Technology: | SiC |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 23 ns |
Typical Turn-On Delay Time: | 13 ns |
Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
Vgs - Gate-Source Voltage: | -4 V, +15 V |
Vgs th - Gate-Source Threshold Voltage: | 3.6 V |
Channel Type | N |
Maximum Continuous Drain Current | 66 A |
Maximum Drain Source Voltage | 1200 V |
Mounting Type | Through Hole |
Package Type | TO 247 |
Pin Count | 4 |
Automotive | No |
Channel Mode | Enhancement |
Configuration | Single Dual Source |
ECCN (US) | EAR99 |
Lead Shape | Through Hole |
Material | SiC |
Maximum Continuous Drain Current (A) | 66 |
Maximum Drain Source Resistance (mOhm) | 53.5@15V |
Maximum Drain Source Voltage (V) | 1200 |
Maximum Gate Source Leakage Current (nA) | 250 |
Maximum Gate Source Voltage (V) | 15 |
Maximum Gate Threshold Voltage (V) | 3.6 |
Maximum IDSS (uA) | 50 |
Maximum Operating Temperature (°C) | 175 |
Maximum Positive Gate Source Voltage (V) | 15 |
Maximum Power Dissipation (mW) | 326000 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 223 |
Minimum Gate Threshold Voltage (V) | 1.8 |
Minimum Operating Temperature (°C) | -40 |
Mounting | Through Hole |
Number of Elements per Chip | 1 |
Operating Junction Temperature (°C) | -40 to 175 |
Part Status | Active |
PCB changed | 4 |
PPAP | No |
Process Technology | C3M |
Product Category | Power MOSFET |
Standard Package Name | TO |
Supplier Package | TO-247 |
Supplier Temperature Grade | Industrial |
Tab | Tab |
Typical Diode Forward Voltage (V) | 5.5 |
Typical Drain Source Resistance @ 25°C (mOhm) | 40@15V |
Typical Fall Time (ns) | 9 |
Typical Gate Charge @ Vgs (nC) | 99@15V |
Typical Gate Plateau Voltage (V) | 7 |
Typical Gate Threshold Voltage (V) | 2.7 |
Typical Gate to Drain Charge (nC) | 28 |
Typical Gate to Source Charge (nC) | 34 |
Typical Input Capacitance @ Vds (pF) | 2900@1000V |
Typical Output Capacitance (pF) | 103 |
Typical Reverse Recovery Charge (nC) | 850 |
Typical Reverse Recovery Time (ns) | 33 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 5@1000V |
Typical Rise Time (ns) | 17 |
Typical Turn-Off Delay Time (ns) | 23 |
Typical Turn-On Delay Time (ns) | 13 |
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