FDD8880

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140 руб.
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от 10 шт.110 руб.
от 30 шт.93 руб.
Добавить в корзину 3 шт. на сумму 420 руб.
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Номенклатурный номер: 8022942141

Описание

Полевые МОП-транзисторы Fairchild PowerTrench

Технические параметры

Channel Mode Enhancement
Channel Type N
Maximum Continuous Drain Current 58 A
Maximum Drain Source Resistance 15 mΩ
Maximum Drain Source Voltage 30 V
Maximum Gate Source Voltage -20 V, +20 V
Maximum Operating Temperature +175 °C
Maximum Power Dissipation 55 W
Minimum Gate Threshold Voltage 1.2V
Minimum Operating Temperature -55 °C
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type DPAK(TO-252)
Pin Count 3
Series PowerTrench
Transistor Configuration Single
Transistor Material Si
Typical Gate Charge @ Vgs 23 nC @ 10 V
Width 6.22mm
Brand: onsemi/Fairchild
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 2500
Fall Time: 32 ns
Id - Continuous Drain Current: 58 A
Manufacturer: onsemi
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: DPAK-3
Part # Aliases: FDD8880_NL
Pd - Power Dissipation: 55 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 31 nC
Rds On - Drain-Source Resistance: 9 mOhms
Rise Time: 91 ns
Series: FDD8880
Subcategory: MOSFETs
Technology: Si
Tradename: PowerTrench
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 38 ns
Typical Turn-On Delay Time: 8 ns
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
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Datasheet FDD8880
pdf, 498 КБ