FDD8880
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см. техническую документацию
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140 руб.
Мин. кол-во для заказа 3 шт.
от 10 шт. —
110 руб.
от 30 шт. —
93 руб.
Добавить в корзину 3 шт.
на сумму 420 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Полевые МОП-транзисторы Fairchild PowerTrench
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 58 A |
Maximum Drain Source Resistance | 15 mΩ |
Maximum Drain Source Voltage | 30 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 55 W |
Minimum Gate Threshold Voltage | 1.2V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | DPAK(TO-252) |
Pin Count | 3 |
Series | PowerTrench |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 23 nC @ 10 V |
Width | 6.22mm |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 32 ns |
Id - Continuous Drain Current: | 58 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | DPAK-3 |
Part # Aliases: | FDD8880_NL |
Pd - Power Dissipation: | 55 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 31 nC |
Rds On - Drain-Source Resistance: | 9 mOhms |
Rise Time: | 91 ns |
Series: | FDD8880 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | PowerTrench |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 38 ns |
Typical Turn-On Delay Time: | 8 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.2 V |