C3M0280090J
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см. техническую документацию
см. техническую документацию
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Альтернативные предложения3
Номенклатурный номер: 8023001317
Бренд: WOLFSPEED
Описание
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform.
Технические параметры
Brand | Cree, Inc. |
Channel Mode | Enhancement |
Configuration | Single |
Fall Time | 4 ns |
Forward Transconductance - Min | 3.1 S |
Id - Continuous Drain Current | 11 A |
Manufacturer | Cree, Inc. |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | D2PAK-7 |
Packaging | Tube |
Pd - Power Dissipation | 50 W |
Product Category | MOSFET |
Qg - Gate Charge | 9.5 nC |
Rds On - Drain-Source Resistance | 385 mOhms |
Rise Time | 6.5 ns |
RoHS | Details |
Technology | SiC |
Transistor Polarity | N-Channel |
Typical Turn-Off Delay Time | 11 ns |
Typical Turn-On Delay Time | 10.5 ns |
Vds - Drain-Source Breakdown Voltage | 900 V |
Vgs - Gate-Source Voltage | -8 V, +18 V |
Vgs th - Gate-Source Threshold Voltage | 1.8 V |
Channel Type | N |
Maximum Continuous Drain Current | 11 A |
Maximum Drain Source Resistance | 280 mΩ |
Maximum Drain Source Voltage | 900 V |
Maximum Gate Source Voltage | -8 V, 18 V |
Maximum Gate Threshold Voltage | 3.5V |
Maximum Power Dissipation | 50 W |
Minimum Gate Threshold Voltage | 1.8V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | TO-263-7 |
Pin Count | 7 |
Transistor Configuration | Single |
Transistor Material | SiC |
Typical Gate Charge @ Vgs | 9.5 nC @ 4/15V |
Width | 9.12mm |
Case | D2PAK-7 |
Drain current | 11A |
Drain-source voltage | 900V |
Features of semiconductor devices | Kelvin terminal |
Gate charge | 9.5nC |
Gate-source voltage | -8…19V |
Kind of channel | enhanced |
Mounting | SMD |
On-state resistance | 0.28Ω |
Polarisation | unipolar |
Power dissipation | 50W |
Reverse recovery time | 20ns |
Type of transistor | N-MOSFET |
Техническая документация
Datasheet
pdf, 869 КБ
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