FDMS86310
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Описание
80V 105A 3.8mΩ@10V,17A 96W 3.3V@250uA N Channel Power-56-8 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 105A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.8mΩ@10V, 17A |
| Drain Source Voltage (Vdss) | 80V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.3V@250uA |
| Input Capacitance (Ciss@Vds) | 4.73nF@40V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 96W |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF@40V |
| Total Gate Charge (Qg@Vgs) | 55nC@0~8V |
| Type | N Channel |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 17 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | Power-56-8 |
| Pd - Power Dissipation: | 96 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 95 nC |
| Rds On - Drain-Source Resistance: | 6.7 mOhms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.4 V |
Техническая документация
Datasheet
pdf, 417 КБ
