FCD2250N80Z

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310 руб.

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Номенклатурный номер: 8023082593

Trans MOSFET N-CH 800V 2.6A 3-Pin DPAK T/R - Tape and Reel (Alt: FCD2250N80Z)

Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	8.7 ns
Forward Transconductance - Min:	2.28 S
Id - Continuous Drain Current:	2.6 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	DPAK-3
Pd - Power Dissipation:	39 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	14 nC
Rds On - Drain-Source Resistance:	2.25 Ohms
Rise Time:	6.7 ns
Series:	FCD2250N80Z
Subcategory:	MOSFETs
Technology:	Si
Tradename:	SuperFET II
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	11 ns
Vds - Drain-Source Breakdown Voltage:	800 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Current - Continuous Drain (Id) @ 25В°C	2.6A(Tc)
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	585pF @ 100V
Manufacturer	ON Semiconductor
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-252-3, DPak(2 Leads+Tab), SC-63
Packaging	Cut Tape(CT)
Part Status	Active
Power Dissipation (Max)	39W(Tc)
Rds On (Max) @ Id, Vgs	2.25Ohm @ 1.3A, 10V
Series	SuperFETВ® II
Supplier Device Package	D-Pak
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4.5V @ 260ВµA

pdf, 800 КБ

pdf, 802 КБ