2DB1713-13

Фото 1/2 2DB1713-13
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см. техническую документацию
22 руб.
Мин. кол-во для заказа 17 шт.
от 30 шт.19 руб.
17 шт. на сумму 374 руб.
Плати частями
от 0 руб. × 4 платежа
Номенклатурный номер: 8023089167
Бренд: DIODES INC.

Описание

Trans GP BJT PNP 12V 3A 2000mW 4-Pin(3+Tab) SOT-89 T/R

Технические параметры

Brand Diodes Incorporated
Collector- Base Voltage VCBO -15 V
Collector- Emitter Voltage VCEO Max -12 V
Collector-Emitter Saturation Voltage -250 mV
Configuration Single
DC Collector/Base Gain Hfe Min 270 at 500 mA, 2 V
DC Current Gain HFE Max 270
Emitter- Base Voltage VEBO -6 V
Factory Pack Quantity 2500
Gain Bandwidth Product FT 180 MHz
Manufacturer Diodes Incorporated
Maximum DC Collector Current -6 A
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Package / Case SOT-89-3
Packaging Cut Tape or Reel
Pd - Power Dissipation 2000 mW
Product Category Bipolar Transistors-BJT
Product Type BJTs-Bipolar Transistors
Series 2DB17
Subcategory Transistors
Transistor Polarity PNP
Automotive No
ECCN (US) EAR99
EU RoHS Compliant
Lead Shape Flat
Maximum Collector Base Voltage (V) 15
Maximum Collector Cut-Off Current (nA) 100
Maximum Collector-Emitter Saturation Voltage (V) 0.25@30mA@1.5A
Maximum Collector-Emitter Voltage (V) 12
Maximum DC Collector Current (A) 3
Maximum Emitter Base Voltage (V) 6
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 2000
Maximum Transition Frequency (MHz) 180(Typ)
Minimum DC Current Gain 270@500mA@2V
Minimum Operating Temperature (°C) -55
Mounting Surface Mount
Number of Elements per Chip 1
Part Status Active
PCB changed 3
Pin Count 4
PPAP No
Standard Package Name SOT
Supplier Package SOT-89
Tab Tab
Type PNP

Техническая документация

Datasheet
pdf, 78 КБ
Datasheet 2DB1713-13
pdf, 87 КБ