DMN601WK-7
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см. техническую документацию
см. техническую документацию
5 руб.
Мин. кол-во для заказа 80 шт.
от 100 шт. —
4.10 руб.
80 шт.
на сумму 400 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
N-канальный полевой МОП-транзистор, от 40 до 90 В, Diodes Inc.
Технические параметры
| Base Product Number | DMN601 -> |
| Current - Continuous Drain (Id) @ 25В°C | 300mA (Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| HTSUS | 8541.21.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -65В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | SC-70, SOT-323 |
| Power Dissipation (Max) | 200mW (Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | SOT-323 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Brand | Diodes Incorporated |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Id - Continuous Drain Current | 300 mA |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | SMD/SMT |
| Number Of Channels | 1 Channel |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 200 mW |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Rds On - Drain-Source Resistance | 2 Ohms |
| Series | DMN60 |
| Subcategory | MOSFETs |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Resistance | 3 Ω |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 200 mW |
| Number of Elements per Chip | 1 |
| Package Type | SOT-323 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Width | 1.35mm |
