DMT69M8LFV-7
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см. техническую документацию
см. техническую документацию
120 руб.
Мин. кол-во для заказа 4 шт.
от 10 шт. —
92 руб.
4 шт.
на сумму 480 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Gate Drivers
Diodes Incorporated Gate Drivers cover many applications in power systems and motor drives. These gate drivers act as the interface between the microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.
Diodes Incorporated Gate Drivers cover many applications in power systems and motor drives. These gate drivers act as the interface between the microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Id - Continuous Drain Current: | 45 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerDI3333-8 |
| Pd - Power Dissipation: | 42 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 33.5 nC |
| Rds On - Drain-Source Resistance: | 9.5 mOhms |
| Series: | DMT69M8LFV |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -16 V, +16 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
Техническая документация
Datasheet
pdf, 515 КБ
