DMG2305UX-7
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см. техническую документацию
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8 руб.
Мин. кол-во для заказа 47 шт.
47 шт.
на сумму 376 руб.
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Описание
Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
Continuous Drain Current (Id) @ 25В°C | 4.2A |
Power Dissipation-Max (Ta=25В°C) | 1.4W |
Rds On - Drain-Source Resistance | 52mО© @ 4.2A,4.5V |
Transistor Polarity | P Channel |
Vds - Drain-Source Breakdown Voltage | 20V |
Vgs - Gate-Source Voltage | 900mV @ 250uA |
Channel Mode | Enhancement |
Channel Type | P |
Maximum Continuous Drain Current | 3.3 A |
Maximum Drain Source Resistance | 200 mΩ |
Maximum Drain Source Voltage | 20 V |
Maximum Gate Source Voltage | -8 V, +8 V |
Maximum Gate Threshold Voltage | 0.9V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 1.4 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-23 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 10.2 nC @ 4.5 V |
Width | 1.4mm |
Brand: | Diodes Incorporated |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 34.7 ns |
Id - Continuous Drain Current: | 5 A |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 1.4 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 10.2 nC |
Rds On - Drain-Source Resistance: | 52 mOhms |
Rise Time: | 13.7 ns |
Series: | DMG2305 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 79.3 ns |
Typical Turn-On Delay Time: | 10.8 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -8 V, +8 V |
Vgs th - Gate-Source Threshold Voltage: | 900 mV |
Техническая документация
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