BST52TA
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см. техническую документацию
см. техническую документацию
26 руб.
Мин. кол-во для заказа 15 шт.
15 шт.
на сумму 390 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 90 V |
| Collector- Emitter Voltage VCEO Max: | 80 V |
| Configuration: | Single |
| Continuous Collector Current: | 0.5 A |
| DC Collector/Base Gain hfe Min: | 1000 at 150 mA at 10 V, 2000 at 500 mA at 10 V |
| DC Current Gain hFE Max: | 1000 |
| Emitter- Base Voltage VEBO: | 10 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 0.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-89 |
| Pd - Power Dissipation: | 1 W |
| Product Category: | Darlington Transistors |
| Product Type: | Darlington Transistors |
| Series: | BST52 |
| Subcategory: | Transistors |
| Transistor Polarity: | NPN |
| Maximum Base Emitter Saturation Voltage | 1.9 V |
| Maximum Collector Base Voltage | 90 V |
| Maximum Collector Emitter Saturation Voltage | 1.3 V |
| Maximum Collector Emitter Voltage | 80 V |
| Maximum Continuous Collector Current | 500 mA |
| Maximum Emitter Base Voltage | 10 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1 W |
| Minimum DC Current Gain | 1000 |
| Minimum Operating Temperature | -65 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-89 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | NPN |
| Width | 2.6mm |
