FZT857TA
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см. техническую документацию
см. техническую документацию
140 руб.
Мин. кол-во для заказа 3 шт.
3 шт.
на сумму 420 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Технические параметры
| Maximum Collector Base Voltage | 350 V |
| Maximum Collector Emitter Voltage | 300 V |
| Maximum DC Collector Current | 3.5 A |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Frequency | 80 MHz |
| Maximum Operating Temperature | +150 C |
| Maximum Power Dissipation | 3 W |
| Minimum DC Current Gain | 100 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-223 |
| Pin Count | 3+Tab |
| Transistor Configuration | Single |
| Transistor Type | NPN |
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 350 V |
| Collector- Emitter Voltage VCEO Max: | 300 V |
| Collector-Emitter Saturation Voltage: | 345 mV |
| Configuration: | Single |
| Continuous Collector Current: | 3.5 A |
| DC Collector/Base Gain hfe Min: | 15 at 2 A, 10 V |
| DC Current Gain hFE Max: | 100 |
| Emitter- Base Voltage VEBO: | 7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Gain Bandwidth Product fT: | 80 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 3.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Pd - Power Dissipation: | 3 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | FZT857 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
