DMT3020LFDB-7
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см. техническую документацию
см. техническую документацию
48 руб.
Мин. кол-во для заказа 8 шт.
8 шт.
на сумму 384 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
30V 7.7A 20mΩ@10V,9A 700mW 3V@250uA 2 N-Channel UDFN2020-6 MOSFETs ROHS
Технические параметры
| Continuous Drain Current (Id) | 7.7A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 20mΩ@10V, 9A |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Input Capacitance (Ciss@Vds) | 393pF@15V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 700mW |
| Total Gate Charge (Qg@Vgs) | 7nC@10V |
| Type | 2 N-Channel |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 2.4 ns, 2.4 ns |
| Id - Continuous Drain Current: | 7.7 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | DFN-2020-6 |
| Pd - Power Dissipation: | 1.8 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 7 nC |
| Rds On - Drain-Source Resistance: | 20 mOhms, 20 mOhms |
| Rise Time: | 1.9 ns, 1.9 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 7.5 ns, 7.5 ns |
| Typical Turn-On Delay Time: | 1.8 ns, 1.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
Техническая документация
Datasheet
pdf, 486 КБ
Datasheet DMT3020LFDB-7
pdf, 582 КБ
