DMN2004TK-7

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14 руб.

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27 шт. на сумму 378 руб.

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Номенклатурный номер: 8024106751

Бренд: DIODES INC.

N-канал 20 В 540 мА (Ta) 150 мВт (Ta) поверхностный монтаж SOT-523

Base Product Number	DMN2004 ->
Current - Continuous Drain (Id) @ 25В°C	540mA (Ta)
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
ECCN	EAR99
FET Type	N-Channel
HTSUS	8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 16V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	SOT-523
Power Dissipation (Max)	150mW (Ta)
Rds On (Max) @ Id, Vgs	550mOhm @ 540mA, 4.5V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-523
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±8V
Vgs(th) (Max) @ Id	1V @ 250ВµA
Brand:	Diodes Incorporated
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	9.1 ns
Id - Continuous Drain Current:	540 mA
Manufacturer:	Diodes Incorporated
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-523-3
Pd - Power Dissipation:	150 mW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signal
Rds On - Drain-Source Resistance:	550 mOhms
Rise Time:	9.1 ns
Series:	DMN2004
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	51 ns
Typical Turn-On Delay Time:	8.5 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage:	500 mV

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