DMN2005LPK-7

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28 руб.

Мин. кол-во для заказа 15 шт.

Кратность заказа 5 шт.

от 50 шт. — 22 руб.

от 150 шт. — 20 руб.

от 500 шт. — 14.98 руб.

15 шт. на сумму 420 руб.

Плати частями
от 0 руб. × 4 платежа

Номенклатурный номер: 8024840319

Бренд: DIODES INC.

Описание Транзистор N-MOSFET, полевой, 20В, 0,44А, 0,45Вт, DFN1006-3 Характеристики

Base Product Number	DMN2005 ->
Current - Continuous Drain (Id) @ 25В°C	440mA (Ta)
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4V
ECCN	EAR99
FET Type	N-Channel
HTSUS	8541.21.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-65В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	3-UFDFN
Power Dissipation (Max)	450mW (Ta)
Rds On (Max) @ Id, Vgs	1.5Ohm @ 10mA, 4V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	3-X1DFN1006
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±10V
Vgs(th) (Max) @ Id	1.2V @ 100ВµA
Brand:	Diodes Incorporated
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Id - Continuous Drain Current:	440 mA
Manufacturer:	Diodes Incorporated
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	X1-DFN1006-3
Pd - Power Dissipation:	450 mW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signal
Rds On - Drain-Source Resistance:	1.5 Ohms
Series:	DMN2005
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage:	530 mV

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