DMN65D8LQ-13

DMN65D8LQ-13
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см. техническую документацию
9 руб.
Мин. кол-во для заказа 50 шт.
Кратность заказа 10 шт.
от 100 шт.7 руб.
50 шт. на сумму 450 руб.
Плати частями
от 0 руб. × 4 платежа
Номенклатурный номер: 8025384777
Бренд: DIODES INC.

Описание

Automotive MOSFETs
Diodes Incorporated Automotive MOSFETs meet the stringent requirements of the AEC-Q101 reliability standard of the Automotive Electronics Council. Products with a 'Q' suffix indicate that the product is Automotive grade. This means the device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive applications. The MOSFETs support customers with the PPAP (Production Part Approval Process), and TS16949 approved manufacturing sites.

Технические параметры

Brand: Diodes Incorporated
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 10000
Id - Continuous Drain Current: 310 mA
Manufacturer: Diodes Incorporated
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: SOT-23-3
Pd - Power Dissipation: 540 mW
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 870 pC
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 3 Ohms
Series: DMN65
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V

Техническая документация

Datasheet DMN65D8LQ-7
pdf, 455 КБ