IXTA08N50D2, N-CH MOSFETS (D2) 500V 800MA
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Описание
Semiconductors\Discrete Semiconductors
D2 Series N-Channel Depletion Mode Power MOSFETsIXYS D2 Series 100V-1700V N-Channel Depletion Mode Power MOSFETs are depletion mode devices that operate in a "normally-on" mode, requiring zero turn-on voltage at the gate terminal. The series provides blocking voltages up to 1700V and low drain-to-source resistances to provide simplified control and reduced power dissipation in systems that are continuously "on" (emergency or burglar alarms, for instance).
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Depletion |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Fall Time: | 52 ns |
| Forward Transconductance - Min: | 340 mS |
| Id - Continuous Drain Current: | 800 mA |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 60 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 12.7 nC |
| Rds On - Drain-Source Resistance: | 4.6 Ohms |
| Rise Time: | 54 ns |
| Series: | IXTA08N50 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | Depletion Mode MOSFET |
| Typical Turn-Off Delay Time: | 35 ns |
| Typical Turn-On Delay Time: | 28 ns |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
Техническая документация
Datasheet
pdf, 275 КБ
