IXTT360N055T2, 360Amps 55V
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см. техническую документацию
см. техническую документацию
1 960 руб.
Кратность заказа 10 шт.
10 шт.
на сумму 19 600 руб.
Плати частями
от 4 900 руб. × 4 платежа
от 4 900 руб. × 4 платежа
Описание
Semiconductors\Discrete Semiconductors
HiPerFET™ Power MOSFETs IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 30 |
| Fall Time: | 56 ns |
| Forward Transconductance - Min: | 65 S |
| Id - Continuous Drain Current: | 360 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-268-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 935 W |
| Product Category: | MOSFETs |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 330 nC |
| Rds On - Drain-Source Resistance: | 2.4 mOhms |
| Rise Time: | 23 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 62 ns |
| Typical Turn-On Delay Time: | 30 ns |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
Техническая документация
Datasheet
pdf, 874 КБ
