PJQ4403P-R2-00001

PJQ4403P-R2-00001
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см. техническую документацию
30000 шт., срок 6 недель
47 руб.
Кратность заказа 5000 шт.
5000 шт. на сумму 235 000 руб.
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Номенклатурный номер: 8027803776

Описание

Semiconductors\Discrete Semiconductors
Power MOSFETs for Wireless Charging Transmitters

PANJIT Power MOSFETs for Wireless Charging Transmitters provide an advanced solution for the wireless chargers to work properly and efficiently. These wireless charging transmitters are designed to transfer the electromagnetic field to the battery receiver of its application. The power MOSFETs are assembled in a low-profile package that saves space while delivering similar on-resistance and thermal resistance. These devices feature low switching losses, high switching frequency operation, low operating temperature, and low gate drive losses. The power MOSFETs are ideally used in wireless charging pads, wireless charging sockets, wireless charging cases, and wireless charging stations.

Технические параметры

Brand: Panjit
Channel Mode: Enhancement
Factory Pack Quantity: Factory Pack Quantity: 5000
Fall Time: 14 ns
Id - Continuous Drain Current: 35 A
Manufacturer: Panjit
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: DFN3333-8
Pd - Power Dissipation: 30 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 15 nC
Rds On - Drain-Source Resistance: 15.5 mOhms
Rise Time: 22 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: P-Channel
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 60 ns
Typical Turn-On Delay Time: 9 ns
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V

Техническая документация

Datasheet
pdf, 647 КБ

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