PJA3460_R1_00001, Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
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см. техническую документацию
см. техническую документацию
5900 шт., срок 6 недель
170 руб.
от 10 шт. —
84 руб.
от 25 шт. —
58 руб.
от 100 шт. —
34.90 руб.
1 шт.
на сумму 170 руб.
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Технические параметры
| Case | SOT23 |
| Drain current | 2.5A |
| Drain-source voltage | 60V |
| Gate charge | 9.3nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | PanJit Semiconductor |
| Mounting | SMD |
| On-state resistance | 90mΩ |
| Polarisation | unipolar |
| Power dissipation | 1.25W |
| Pulsed drain current | 10A |
| Type of transistor | N-MOSFET |
| Brand: | Panjit |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 6.4 ns |
| Id - Continuous Drain Current: | 2.5 A |
| Manufacturer: | Panjit |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 1.25 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 9.3 nC |
| Rds On - Drain-Source Resistance: | 90 mOhms |
| Rise Time: | 9.7 ns |
| Series: | NFET-60TMN |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 18.5 ns |
| Typical Turn-On Delay Time: | 3.2 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 402 КБ
Сроки доставки
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