IXTN400N15X4, Discrete Semiconductor Modules MSFT N-CH ULTRA JNCT X3 MINI
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см. техническую документацию
см. техническую документацию
10 340 руб.
Кратность заказа 10 шт.
от 20 шт. —
9 270 руб.
от 50 шт. —
8 960 руб.
от 100 шт. —
8 645.49 руб.
Добавить в корзину 10 шт.
на сумму 103 400 руб.
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от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Описание
Semiconductors\Discrete Semiconductors\Discrete Semiconductor Modules
Ultra Junction MOSFETs IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. IXYS Ultra Junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Технические параметры
| Brand: | IXYS |
| Configuration: | Single |
| Factory Pack Quantity: | 10 |
| Fall Time: | 8 ns |
| Id - Continuous Drain Current: | 400 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Chassis Mount |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-227-4 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 830 W |
| Product Category: | Discrete Semiconductor Modules |
| Product Type: | Discrete Semiconductor Modules |
| Product: | Power MOSFET Modules |
| Rds On - Drain-Source Resistance: | 2.35 mOhms |
| Rise Time: | 22 ns |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Type: | X4-Class |
| Typical Turn-Off Delay Time: | 180 ns |
| Typical Turn-On Delay Time: | 40 ns |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
| Vr - Reverse Voltage: | 100 V |
Техническая документация
Datasheet
pdf, 334 КБ
