ZTX751
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см. техническую документацию
см. техническую документацию
100 руб.
Мин. кол-во для заказа 2 шт.
от 10 шт. —
45 руб.
от 100 шт. —
33 руб.
от 1000 шт. —
30.26 руб.
2 шт.
на сумму 200 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Альтернативные предложения1
Описание
Электроэлемент
HIGH GAIN TRANSISTOR, PNP, -60V, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-60V, Transition Frequency ft:140MHz, Power Dissipation Pd:1W, DC Collector Current:-2A, DC Current Gain hFE:200hFE, No. of Pins:3Pins , RoHS Compliant: Yes
Технические параметры
| Transistor Polarity | PNP; Collector Emitter Voltage V(br)ceo |
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 80 V |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage: | 280 mV |
| Configuration: | Single |
| Continuous Collector Current: | -2 A |
| Emitter- Base Voltage VEBO: | 7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Gain Bandwidth Product fT: | 140 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 1 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | ZTX751 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Brand | Diodes Incorporated |
| Collector- Base Voltage VCBO | -80 V |
| Collector- Emitter Voltage VCEO Max | -60 V |
| Collector-Emitter Saturation Voltage | -0.28 V |
| Configuration | Single |
| Continuous Collector Current | -2 A |
| Emitter- Base Voltage VEBO | -5 V |
| Factory Pack Quantity | 4000 |
| Gain Bandwidth Product fT | 140 MHz |
| Height | 4.01 mm |
| Length | 4.77 mm |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | 2 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-92-3 |
| Packaging | Bulk |
| Pd - Power Dissipation | 1 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | ZTX751 |
| Width | 2.41 mm |
| Maximum Collector Base Voltage | 80 V |
| Maximum Collector Emitter Voltage | -60 V |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Frequency | 140 MHz |
| Maximum Power Dissipation | 1 W |
| Minimum DC Current Gain | 100 |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-92 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | PNP |
