PJD16P06A_L2_00001, Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
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см. техническую документацию
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Описание
Semiconductors\Transistors\Unipolar transistors\P channel transistors
60V P-Channel Enhancement Mode MOSFETsPANJIT 60V P-Channel Enhancement Mode MOSFETs are designed to minimize on-state resistance (R DS(ON) ) and maintain superior switching performance. These devices feature a 200mA to 16A continuous drain current, a 1.1nC to 22nC gate charge, and 300mW to 50W power dissipation. These MOSFETs include advanced Trench Process technology and are optimized for use as relay drivers and line drivers.
Технические параметры
| Case | TO252AA |
| Drain current | -16A |
| Drain-source voltage | -60V |
| Gate charge | 22nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Manufacturer | PanJit Semiconductor |
| Mounting | SMD |
| On-state resistance | 65mΩ |
| Polarisation | unipolar |
| Power dissipation | 2W |
| Pulsed drain current | -64A |
| Type of transistor | P-MOSFET |
| Brand: | Panjit |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 16 ns |
| Id - Continuous Drain Current: | 16 A |
| Manufacturer: | Panjit |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252AA-3 |
| Pd - Power Dissipation: | 25 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 22 nC |
| Rds On - Drain-Source Resistance: | 65 mOhms |
| Rise Time: | 42 ns |
| Series: | NFET-60SMP |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 65 ns |
| Typical Turn-On Delay Time: | 13 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 0.07 |
Техническая документация
Datasheet
pdf, 326 КБ
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