AS6C4016-55ZIN, IC: SRAM memory; 256kx16bit; 2.7?5.5V; 55ns; TSOP44 II; parallel

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Номенклатурный номер: 8031968259

Артикул: AS6C4016-55ZIN

Описание IC: SRAM memory; 256kx16bit; 2.7?5.5V; 55ns; TSOP44 II; parallel Характеристики

Access Time	55ns
ECCN	3A991B2A
HTSUS	8542.32.0041
Memory Format	SRAM
Memory Interface	Parallel
Memory Size	4Mb (256K x 16)
Memory Type	Volatile
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Mounting Type	Surface Mount
Operating Temperature	-40В°C ~ 85В°C (TA)
Package	Tray
Package / Case	44-TSOP (0.400"", 10.16mm Width)
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	44-TSOP II
Technology	SRAM - Asynchronous
Voltage - Supply	2.7V ~ 5.5V
Write Cycle Time - Word, Page	55ns
Brand	Alliance Memory
Factory Pack Quantity	135
Interface Type	Parallel
Manufacturer	Alliance Memory
Maximum Operating Temperature	+85 C
Minimum Operating Temperature	-40 C
Mounting Style	SMD/SMT
Operating Temperature Range	-40 C to+85 C
Organization	256 k x 16
Packaging	Tray
Product Category	SRAM
RoHS	Details
Series	AS6C4016
Supply Current - Max	60 mA
Supply Voltage - Max	5.5 V
Supply Voltage - Min	2.7 V
Type	Asynchronous
Address Bus Width	18bit
Low Power	Yes
Maximum Operating Supply Voltage	5.5 V
Maximum Random Access Time	55ns
Minimum Operating Supply Voltage	2.7 V
Number of Bits per Word	16bit
Number of Words	256k
Organisation	256k x 16 bit
Package Type	TSOP
Pin Count	44
Timing Type	Asynchronous
Width	10.3mm
Вес, г	0.48

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