AS6C4008-55PCN, Микросхема
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Описание
Описание IC: SRAM memory; 512kx8bit; 2.7?5V; 55ns; DIP32; parallel; 600mils Характеристики
Категория | Микросхема |
Тип | памяти |
Вид | SRAM |
Технические параметры
Access Time | 55ns |
ECCN | 3A991B2A |
HTSUS | 8542.32.0041 |
Memory Format | SRAM |
Memory Interface | Parallel |
Memory Size | 4Mb (512K x 8) |
Memory Type | Volatile |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | 0В°C ~ 70В°C (TA) |
Package | Tube |
Package / Case | 32-DIP (0.600"", 15.24mm) |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | 32-PDIP |
Technology | SRAM - Asynchronous |
Voltage - Supply | 2.7V ~ 5.5V |
Write Cycle Time - Word, Page | 55ns |
Address Bus Width | 19bit |
Low Power | Yes |
Maximum Operating Supply Voltage | 5.5 V |
Maximum Operating Temperature | +70 °C |
Maximum Random Access Time | 55ns |
Minimum Operating Supply Voltage | 2.7 V |
Minimum Operating Temperature | 0 °C |
Number of Bits per Word | 8bit |
Number of Words | 512k |
Organisation | 512k x 8 bit |
Package Type | PDIP |
Pin Count | 32 |
Timing Type | Asynchronous |
Width | 13.818mm |
Address Bus | 19(b) |
Architecture | SDR |
Clock Freq | Not Required(MHz) |
Density | 4194304(Bit) |
Mounting | Through Hole |
Number of I/O Lines | 8 |
Number of Ports | 1 |
Operating Supply Voltage (Max) | 5.5(V) |
Operating Supply Voltage (Min) | 2.7(V) |
Operating Supply Voltage (Typ) | 3(V) |
Operating Temp Range | 0C to 70C |
Operating Temperature Classification | COMMERCIALC |
Packaging | Rail/Tube |
Rad Hardened | No |
Supply Current | 60 |
Sync/Async | Asynchronous |
Word Size | 8(b) |
Техническая документация
Datasheet
pdf, 716 КБ