C3M0032120K, TO-247-4L SiC MOSFETs ROHS
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см. техническую документацию
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25 шт., срок 6-8 недель
4 080 руб.
Кратность заказа 5 шт.
5 шт.
на сумму 20 400 руб.
Плати частями
от 5 100 руб. × 4 платежа
от 5 100 руб. × 4 платежа
Альтернативные предложения3
Описание
1200V VBR (minimum) across entire operating temperature range [-40˚C – 175˚C] +15V gate drive voltage
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 63 A |
Maximum Drain Source Resistance | 32 mΩ |
Maximum Drain Source Voltage | 1200 V |
Maximum Gate Source Voltage | -8 V, 19 V |
Maximum Gate Threshold Voltage | 3.6V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 283 W |
Minimum Gate Threshold Voltage | 1.8V |
Minimum Operating Temperature | -40 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-247-4 |
Pin Count | 4 |
Transistor Configuration | Single |
Transistor Material | SiC |
Typical Gate Charge @ Vgs | 118 nC @ 4/15V |
Width | 5.21mm |
Brand: | Wolfspeed |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Fall Time: | 9 ns |
Forward Transconductance - Min: | 27 S |
Id - Continuous Drain Current: | 63 A |
Manufacturer: | Wolfspeed |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-247-4 |
Packaging: | Tube |
Pd - Power Dissipation: | 283 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET |
Qg - Gate Charge: | 118 nC |
Rds On - Drain-Source Resistance: | 32 mOhms |
Rise Time: | 18 ns |
Subcategory: | MOSFETs |
Technology: | SiC |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 32 ns |
Typical Turn-On Delay Time: | 25 ns |
Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
Vgs - Gate-Source Voltage: | -4 V, +15 V |
Vgs th - Gate-Source Threshold Voltage: | 3.6 V |
Automotive | Unknown |
Configuration | Single Dual Source |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | Through Hole |
Material | SiC |
Maximum Continuous Drain Current (A) | 63 |
Maximum Drain Source Resistance (mOhm) | 43@15V |
Maximum Drain Source Voltage (V) | 1200 |
Maximum Gate Source Leakage Current (nA) | 250 |
Maximum Gate Source Voltage (V) | 15 |
Maximum Gate Threshold Voltage (V) | 3.6 |
Maximum IDSS (uA) | 50 |
Maximum Operating Temperature (°C) | 175 |
Maximum Positive Gate Source Voltage (V) | 15 |
Maximum Power Dissipation (mW) | 283000 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 120 |
Minimum Gate Threshold Voltage (V) | 1.8 |
Minimum Operating Temperature (°C) | -40 |
Mounting | Through Hole |
Operating Junction Temperature (°C) | -40 to 175 |
Packaging | Tube |
Part Status | Active |
PCB changed | 4 |
PPAP | Unknown |
Process Technology | C3M |
Product Category | Power MOSFET |
Standard Package Name | TO |
Supplier Package | TO-247 |
Tab | Tab |
Typical Diode Forward Voltage (V) | 4.6 |
Typical Fall Time (ns) | 9 |
Typical Gate Charge @ Vgs (nC) | 118@15V |
Typical Gate Plateau Voltage (V) | 6.5 |
Typical Gate Threshold Voltage (V) | 2.5 |
Typical Gate to Drain Charge (nC) | 34 |
Typical Gate to Source Charge (nC) | 40 |
Typical Input Capacitance @ Vds (pF) | 3357@1000V |
Typical Output Capacitance (pF) | 129 |
Typical Reverse Recovery Charge (nC) | 478 |
Typical Reverse Recovery Time (ns) | 27 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 8@1000V |
Typical Rise Time (ns) | 18 |
Typical Turn-Off Delay Time (ns) | 32 |
Typical Turn-On Delay Time (ns) | 25 |
Техническая документация
Datasheet
pdf, 817 КБ
Datasheet C3M0032120K
pdf, 859 КБ
Сроки доставки
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