PJA3439_R1_00001, 60V 300mA 4@500mA,10V 500mW 2.5V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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см. техническую документацию
см. техническую документацию
4850 шт., срок 6-8 недель
16 руб.
Кратность заказа 50 шт.
от 150 шт. —
13 руб.
от 500 шт. —
11 руб.
от 3000 шт. —
9.78 руб.
50 шт.
на сумму 800 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Альтернативные предложения1
Описание
60V P-Channel Enhancement Mode MOSFETs
PANJIT 60V P-Channel Enhancement Mode MOSFETs are designed to minimize on-state resistance (R DS(ON) ) and maintain superior switching performance. These devices feature a 200mA to 16A continuous drain current, a 1.1nC to 22nC gate charge, and 300mW to 50W power dissipation. These MOSFETs include advanced Trench Process technology and are optimized for use as relay drivers and line drivers.
PANJIT 60V P-Channel Enhancement Mode MOSFETs are designed to minimize on-state resistance (R DS(ON) ) and maintain superior switching performance. These devices feature a 200mA to 16A continuous drain current, a 1.1nC to 22nC gate charge, and 300mW to 50W power dissipation. These MOSFETs include advanced Trench Process technology and are optimized for use as relay drivers and line drivers.
Технические параметры
| Brand: | Panjit |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 32 ns |
| Id - Continuous Drain Current: | 300 mA |
| Manufacturer: | Panjit |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 1.1 nC |
| Rds On - Drain-Source Resistance: | 13 Ohms |
| Rise Time: | 19 ns |
| Series: | NFET-60TMP |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 52 ns |
| Typical Turn-On Delay Time: | 4.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Техническая документация
Datasheet PJA3439_R1_00001
pdf, 273 КБ
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